JPS6421919U - - Google Patents
Info
- Publication number
- JPS6421919U JPS6421919U JP9291488U JP9291488U JPS6421919U JP S6421919 U JPS6421919 U JP S6421919U JP 9291488 U JP9291488 U JP 9291488U JP 9291488 U JP9291488 U JP 9291488U JP S6421919 U JPS6421919 U JP S6421919U
- Authority
- JP
- Japan
- Prior art keywords
- insulating
- pressurized
- coated
- directions
- thickness direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Multi-Conductor Connections (AREA)
- Insulated Conductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9291488U JPS6421919U (en]) | 1988-07-13 | 1988-07-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9291488U JPS6421919U (en]) | 1988-07-13 | 1988-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6421919U true JPS6421919U (en]) | 1989-02-03 |
Family
ID=31317365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9291488U Pending JPS6421919U (en]) | 1988-07-13 | 1988-07-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6421919U (en]) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7381599B2 (en) | 1993-09-20 | 2008-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US7456427B2 (en) | 1991-08-26 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices and method of manufacturing the same |
-
1988
- 1988-07-13 JP JP9291488U patent/JPS6421919U/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7456427B2 (en) | 1991-08-26 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices and method of manufacturing the same |
| US7381599B2 (en) | 1993-09-20 | 2008-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US7525158B2 (en) | 1993-09-20 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having pixel electrode and peripheral circuit |
| US7569856B2 (en) | 1993-09-20 | 2009-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |